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¢º
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CMP
:
Si,
GaAs,
Poly-Si,
SiO2,
Metal(
Au,
Cu,
Ni,
Sus,
Al
etc.
),
Polymer(
PR,
PMMA,
PC,
PT
etc.
),
Ceramic
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¢º
|
Si,
GaAs,
Glass,
Quartz,
SOI,
SOG,
Metal,
Polymer
:
Thickness
:
0.1
~
20mm
Tolerance
:
±10um
Chipping
:
<
50um
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¢º
|
Diameter
:
2"
~
8"
|
¢º
|
Method
:
CZ, FZ
|
¢º
|
Grade
:
Prime, Test,
Dummy
|
¢º
|
Type/Dopant
:
P(Boron), N (Phos,
Antimony)
|
¢º
|
Orientation
:
<100>,
<111>,
<110>
|
¢º
|
Resistivity
:
0.001 ~ 100,000
Ohm•cm
|
¢º
|
Min. Thickness
& Tolerance
|
2"
|
3"
|
4"
|
5"
|
6"
|
50um
±1um
|
50um
±1um
|
50um
±1um
|
90um
±1.5um
|
100um
±2um
|
|
¢º
|
Max
Thickness
:
10t
|
¢º
|
TTV
:
2"
~
5"(+/-
1um),
6"(+/- 2um) , 8"( +/-
4um)
|
¢º
|
Surface
:
One Side Polished,
Double Side Polished
|
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¢º
|
Diameter
:
2"
~
12"
|
¢º
|
Square
:
5mm
~
700mm
|
¢º
|
Material
:
Sodalime, Corning7740,
Corning1737, Boro33,
B270, ITO Glass
Etc.
|
¢º
|
Min. Thickness
& Tolerance
|
2"
|
3"
|
4"
|
5"
|
6"
|
50um
±1um
|
50um
±1um
|
50um
±1um
|
90um
±1.5um
|
100um
±2um
|
|
¢º
|
Max
Thickness
:
10t
|
¢º
|
TTV
:
2"
~
5"( +/-
1um
), 6"( +/- 2um
), 8"( +/-
3um
)
|
¢º
|
Surface
:
One Side Polishing,
Double Side Polishing
|
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¢º
|
Diameter
:
2"
~
8"
|
¢º
|
Square
:
5mm
~
150mm
|
¢º
|
Material
:
Fused Quartz,
Fused Silica
|
¢º
|
Min. Thickness
& Tolerance
|
2"
|
3"
|
4"
|
5"
|
6"
|
50um
±1um
|
50um
±1um
|
50um
±1um
|
50um
±1.5um
|
100um
±2um
|
|
¢º
|
Max
Thickness
:
10t
|
¢º
|
TTV
:
2"
~
5"( +/-
1um
), 6"
( +/- 2um )
|
¢º
|
Surface
:
One Side Polishing,
Double Side Polishing
|
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¢º
|
Ư¼ö
wafer
:
SOI
wafer,
SOG
Wafer(Si
On
Glass),
GOG
Wafer(Glass
On
Glass),
SIMOX
wafer,
GaAs
wafer,
HRS
wafer,
Sapphire
wafer.
|
¢º
|
Hole
°¡°ø
service
:
Sanding,
Drilling,
Laser
|
¢º
|
Jig
Á¦ÀÛ
:
Ceramic,
Graphite,
Sapphire
Jig
Á¦ÀÛ
|
¢º
|
´ë¸éÀû Si, glass,
quartz,
Metal
°¡°ø
¹×
Polishing
service
|
¢º
|
Thin
Film
Process
Service
:
°¢Á¾
Metal
ÁõÂø,
SiO2,
Si3N4,
Pattern
wafer
Á¦ÀÛ
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¡¡
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