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 Si Wafer 특성

Silicon is commonly used as substrate material for infrared reflectors and windows in the 1.5 8 micron region.   The strong absorption band at 9 microns makes it unsuitable for CO2 laser transmission applications, but it is requently used for laser mirrors because of its high thermal conductivity and low density.
Silicon is also useful as a transmitter in the 20 micron range. Maximum available size: 102 mm Dia 50 mm Thk. 

 

 Chemical Formula

Si

 Molecular Weight

28.09

 Crystal Class

Cubic

 Lattice Constant,

A 5.43

 Density, g/cm3 at 293 K

2.329

 Dielectric Constant for 9.37 x 109 Hz

13

 Melting Point, K 

1690

 Thermal Conductivity, W/(m K)  
     at 125 K  
     at 313 K  
     at 400 K


598.6
163
105.1

 Thermal Expansion, 1/K  
     at 75 K
     at 293 K
     at 1400 K


-0.5 x 10E-6  
  2.6 x 10E-6  
  4.6 x 10E-6 

 Specific Heat, cal/(g K)   
     at 298 K
     at 1800 K


0.18
0.253

 Debye Temperature, K

640

 Bandgap, eV

1.1

 Solubility in water

None

 Knoop Hardness, kg/mm2 

1100

 Mohs Hardness

7

 Young's Modulus, GPa

130.91

 Shear Modulus, GPa

79.92

 Bulk Modulus, GPa 

101.97

 Poisson's Ratio3

  0.28

 

Refractive Index

Wavelength, μm 

1.40

1.50

1.66

1.82

2.05

2.50

3.50-5.00

6.00-25.00

Refractive Index

3.49

3.48

3.47

3.46

3.45

3.44

3.43

3.42

 

 


 

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